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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20 4,19 0,55 0,50 1,40 1,53 - 2.082 ALL DIMENSIONS IN M.M. 123 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current (DC) Base Current (DC) Total Power Dissipation @ Tamb = 25 C Operating Storage Junction Temperature Range Symbol BV CBO BV CEO BVEBO IC IB P tot T j ,Tstg Value 60 50 5 100 20 500 -55 to +150 Unit V V V mA mA mW C Continental Device India Limited Data Sheet Page 1 of 4 CSA733 ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise specified) Characteristic Collector Emitter Breakdown Voltage IC=1mA, IB=0 Collector Base Voltage IC=100A, IE=0 Emitter Base Voltage IE=10A, IC=0 Collector Cut-Off Current VCB =60V, IE=0 Emitter Cut-Off Current VEB=5V, IC=0 DC Current Gain VCE=6V, I C=1mA Collector Emitter Saturation Voltage IC=100mA, I B=10mA Base Emitter On Voltage IC=1mA, VCE=6V DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product VCE=6V, I C=10mA Common Base Output Capacitance VCB =10V, IE=0, f=1MHz Noise Figure VCE=6V, I C=0.3mA Rs=10k, f=100Hz hFE CLASSIFICATION Symbol BV CEO BV CBO BVEBO ICBO IEBO hFE* VCE(sat) V BE(on) Min 50 60 5 90 0.6 Typ - Max 0.1 0.1 600 0.3 0.7 Unit V V V A A V V fT C ob NF 100 - - 6 20 MHz pF dB R 90-180 Q P 135=270 200-400 K 300-600 Continental Device India Limited Data Sheet Page 2 of 4 CSA733 Base Emitter On Voltage 1000 V CE = - 6 V 500 300 DC Current Gain VCE=-6V Collector Current I C (mA) 100 hFE DC Current Gain 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 50 30 10 5 3 1 -0.1 VBE (V), Base-Emitter Voltage IC (mA), Collector Current Current Gain-Bandwidth Product fT (MHz), Current Gain-Bandwidth Product VBE (sat), VCE(sat) (V), Saturation Voltage VCE=-6V Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage I =10I C B VBE(sat) VCE(sat) IC (mA), Collector Current IC (mA), Collector Current Continental Device India Limited Data Sheet Page 3 of 4 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 4 of 4 |
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